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| Transys Electronics LIMITED TO-251 Plastic-Encapsulated Transistors 2SC4003 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. BASE 2. COLLECTOR 3. EMITTER Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) 1 2 3 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=10A, IE=0 Ic=1mA, IB=0 IE=10A, IC=0 VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50mA IC=50mA, IB=5mA IC=50mA, IB=5mA VCE=30V, IC=10mA 400 400 5 0.1 0.1 60 200 0.6 1 70 A A V V MHz fT CLASSIFICATION OF hFE(1) Rank Range D 60-120 E 100-200 |
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